PlasmaCCPRF plasma engineering simulator
Open simulator

Guide

PlasmaCCP is a trend-level screening tool. Use these steps to set up runs efficiently and interpret outputs correctly.

Step 1 — Start from the 300 mm baseline or a preset

Open the simulator and either use the pre-loaded 300 mm CCP baseline or select a process preset from the drop-down. The baseline gives you a reference result to anchor comparisons. Presets shorten setup time for common process families.

Save the baseline result before making changes so you have a clean reference to return to.

Step 2 — Review and edit the geometry

Use the Geometry Editor to inspect and edit the chamber layout. The editing tools are the same in both Basic and Advanced mode:

  • Draw new rect, circle, or polyline shapes using the left tool rail.
  • Assign roles (powered electrode, wafer, dielectric, pumping port) from the Properties panel.
  • Use Auto Chamber to automatically fit the chamber boundary around your structures.
  • Enable Snap to Grid for precise positioning. Dimension labels appear on selected shapes.
  • Use the Align tools in the menu bar to position shapes relative to the domain edges.

The Validation panel flags overlapping shapes, shapes outside domain bounds, and missing roles (powered electrode, pumping port) in real time.

Work in Basic mode first. Switch to Advanced when you need multiple RF sources, per-region DC bias, calibration factors, the magnetic field, or model and display options. Mesh control is independent of the mode — it unlocks with the Pro plan.

Step 3 — Set process inputs

Adjust gas mix, pressure, power, bias, and frequency in the sidebar. Keep one deliberate change per run where possible — this makes saved versions and Compare results much easier to interpret.

Step 4 — Run and read outputs

Click Run. Results appear in the Output panel:

  • Summary cards — read these first for the top-line numbers.
  • E-field map — look for field concentration changes caused by geometry or power edits.
  • Electron density map — check spatial distribution trends.
  • Power absorption density — see where power is deposited relative to previous runs.
  • Te (eV) map — spatial trend of electron temperature (zero outside the plasma; the mean is consistent with the 0D energy balance)
  • Sheath diagnostics — use as directional screening signals only; not certified absolute values.

Step 5 — Save a geometry version

Log in, name the setup clearly, and save. Later edits create new versions so you can return to earlier chamber states. Saved geometries are private to your account.

Step 6 — Compare and iterate (Pro)

Use the Compare workspace to place two saved runs side by side. Use Split Test to define a base and a variant with one controlled change. Both workflows are access-controlled while self-serve billing is being prepared.

Common mistakes and troubleshooting

  1. Treating presets as production recipes — presets are chamber-agnostic starting points. Always tune pressure, power, and geometry to your actual hardware before drawing process conclusions.
  2. Runs failing — check that a chamber boundary shape exists and that a powered electrode is assigned. The Validation panel in the Geometry Editor flags these issues before you run. Reduce mesh density (nr, nz) if the run times out.
  3. Unexpected result shifts — confirm whether any input changed since the last saved version. Use the version history to reload the prior state and rerun.
  4. Geometry validation warnings — overlapping shapes can cause unexpected region assignments. Resolve errors before running for cleaner results.
  5. Misreading output magnitudes — E-field, absorbed power, Te and flow carry physical units (V/m, W/m³, eV, m/s) matched to a power balance, but magnitudes remain trend-level calibrations — do not use absolute values for process sign-off without experiment validation.