Electrode corners, dielectric joints, the sheath edge — see which ones move when you change the geometry.

Trend simulator for RF CCP chambers
PlasmaCCPSee the plasma before you open the chamber
Sketch a chamber, hit run, and read the field, density, sheath and gas flow a few seconds later — cheap enough to test an idea before you book chamber time.
No account, no card. A guest run is solved in your browser, so the chamber geometry never leaves it.

Three questions worth answering first
The ones a screening run can actually settle.
Ion flux and ion energy along the wafer radius, so you can tell edge-heavy from center-heavy.
The validated range, the warnings and the model's limits sit next to the numbers, not in a footnote.
Start from a chamber that looks like yours
24 process presets ship with the simulator — these six cover the common families, and every card is an actual solve of that preset.
60 MHz source + 2 MHz bias, CF₄/Ar high-aspect dielectric etch.
Open preset →Plasma-ALD O2 StepClose-coupled 6 mm gap at 8 Torr — the conductance-limited regime.
Open preset →GEC Ref Cell — ArThe standard research geometry (0.1 Torr Ar) — compare against published data.
Open preset →Your geometry never reaches our servers
If you've dropped this kind of screening because the chamber cross-section can't leave the fab, that isn't a problem here.
- Guest runs solve in your browserThe solver is compiled to WebAssembly and runs on your machine. Nothing is solved on ours.
- The geometry is not sentA guest's only request carries 24 scalars for the judgment step. No shapes, no mesh, no snapshot.
- Nothing is keptA guest run leaves no history entry. Close the tab and it's gone.
- Signing in changes that, deliberatelyRun history and saved geometries need the snapshot on your account. If you'd rather not, stay a guest — everything still runs.
Three steps, that's it
Draw → Run → See.
- Draw
Sketch the chamber, or start from one of the presets.
- Run
One click. The reduced-fluid solver converges in a few seconds.
- See
Read the maps side by side and decide what to change next.
Setup, results and validation in one place
The inputs you ran, the maps they produced, and how far they've been checked — no second tool to open.
Wafer-facing plasma volume
Powered-electrode RF mean
of 500 W applied
Render |E|, electron density, and temperature straight onto the chamber cross-section.
Replay how the sheath and fields breathe over a single RF cycle.
Trace neutral-gas flow and current paths as streamlines.
Sweep power, pressure, gap, or frequency at once to map sensitivity curves.
Place two runs side by side and isolate the effect of a single change.
Version your saved chambers and pick up any run where you left off.
Grounded in the literature
We publish where we're wrong
We ran an independent code (Zapdos/MOOSE) against ours and published the result either way — our sheath came out 2.8× too thin, and we left the number in.
- Olthoff & Greenberg 1995 — GEC reference cell
- Lieberman & Lichtenberg — global model
- Turner 2013 — PIC benchmark
One run is never the answer
An engineering call is always A versus B. Wider electrode, tighter gap, different focus ring — these tools exist to make that comparison directly.
All of these need an account; the three marked Pro open on the paid plan. Single runs stay free with no account.
Pricing
The Free plan is fully usable today. Pro adds the sweep, A/B compare, and split-test workflows plus a higher mesh ceiling — paid checkout is not open yet.
Free
$0available now
- Solver runs + every static field map
- Every process preset and baseline
- Save 20 private geometries · 30 runs of history
- Standard mesh up to 48k cells
Pro
Soonin the works
- Compare, Split Test & sweeps
- Turn-on transient + GIF & RF phase animation
- High-res mesh & run history with pinning
Run your first chamber now
PlasmaCCP is a reduced fluid model built for fast trend screening. Results are directional signals — confirm findings with experiments or high-fidelity simulation before sign-off. Read validation and references.